Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

Project Information

Bid Title
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Issuing Agency
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Location
Ohio
Published Date
Oct 13, 2026
Closing Date
Oct 16, 2026
Original Source
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Commodity Codes
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Project Description
Follow Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer Active Contract Opportunity Notice ID 80NSSC27946811Q Related Notice Department/Ind. Agency…... To view the bid detail, please sign up here.

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